Cs150n03 datasheet

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August undefined, 2024

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CS150 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de ...

WebCS150N03 D8 R Source-Drain Diode Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. IS Continuous Source Current (Body Diode) -- -- 150 A ISM … WebCS5N60A8H Datasheet (PDF)..1. cs5n60a8h.pdf Size:392K _wuxi_china. Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS5N60 A8H General Description VDSS 600 V CS5N60 A8H, the silicon N-channel Enhanced ID 5 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the … WebCS150N03_A8 Datasheet (PDF) 0.1. cs150n03 a8.pdf Size:390K _crhj Silicon N-Channel Power MOSFET R CS150N03 A8 General Description VDSS 30 V CS150N03 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 m which reduce the conduction loss, … shutdown group policy

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Cs150n03 datasheet

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WebPart Number Part Number Brand D/C Qty Price(USD)Country / Region Company; CS150N03A8: CS150N03A8 CS: 2024: 86857: 1.39: China WebCS150N04A8 Datasheet (PDF)..1. cs150n04a8.pdf Size:200K _wuxi_china. ... Silicon N-Channel Power MOSFET R CS150N03 A8 General Description VDSS 30 V CS150N03 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 m which reduce the conduction loss, …

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WebPart Number Part Number Brand D/C Qty Price(USD)Country / Region Company; CS150N03: CS150N03 : 2024: 11040: 1.81: China

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